Eightify 对比 Typeset
在比较 Eightify 和 Typeset 时，哪个 AI Summarizer 工具更出色？我们看看定价、替代品、赞成票、功能、评论等等。
在 Eightify 和 Typeset 的比较中，哪一个脱颖而出？
当我们将Eightify和Typeset并排放置时，这两个都是AI驱动的summarizer工具， 用户已经明确表示了他们的偏好，Typeset在赞成票中领先。 Typeset已经获得了 25 个 aitools.fyi 用户的赞成票，而 Eightify 已经获得了 13 个赞成票。
感觉叛逆？投票并搅动事情！
Eightify
什么是 Eightify?
AI摘要YouTube。将任何长的YouTube视频变成带有8个关键想法的摘要。现在，您可以立即确定视频是否值得观看。非常适合bussiness教育，🎙播音，📺截面，📰新闻和👨🏻🏫
Typeset
什么是 Typeset?
您的平台探索和解释论文。搜索270m+的论文，以简单的语言了解它们，然后查找连接的论文，作者，主题。
Eightify 赞同数
13
Typeset 赞同数
25🏆
Eightify 类别
- Summarizer
Typeset 类别
- Summarizer
Eightify 定价类型
- Free
Typeset 定价类型
- Free
Eightify 使用的技术
Webflow
Typeset 使用的技术
Amazon Web Services
jQuery
Bootstrap
Eightify 标签
Chrome Extension
Content Summary
Typeset 标签
Content Summary
AI Whitepapers
AI Emails
Eightify 平均评分
无可用评分Typeset 平均评分
4.00
Eightify 评论
无可用评论Typeset 评论
Sara Sara
The simulation model validated experimental J-V and external quantum efficiency (EQE) to demonstrate an improvement in perovskite (PSK) solar cell (PSC) efficiency. The effect of interface properties at the electron transport layer (ETL)/PSK and PSK/hole transport layer (HTL) was investigated using the Solar Cell Capacitance Simulator (SCAPS). The interfaces between ETL, PSK, and HTL were identified as critical factors in determining high open-circuit voltage (Voc) and FF. In this study, the impact of two types of interfaces, ETL/PSK and PSK/HTL, were investigated. Lowering the defect density at both interfaces to 102 cm−2 reduced interface recombination and increased Voc and FF.The absorber layer defect density and n/i interface of perovskite solar cells were investigated using the Solar Cell Capacitance Simulator-1D (SCAPS-1D) at various cell thicknesses. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was calculated. With a defect density of <1014 cm−3 and an absorber layer thickness of >400 nm, power conversion efficiency can exceed 25%. The study assumed a 0.6 eV Gaussian defect energy level beneath the perovskite's conduction band, which has a characteristic energy of 0.1 eV. These conditions produced the same result on the n/i interface. These findings place constraints on numerical simulations of the correlation between defect mechanism and performance