Spoke.ai 对比 Typeset
在 Spoke.ai 和 Typeset 的对决中，哪个 AI Summarizer 工具脱颖而出？我们比较评论、定价、替代品、赞成票、功能等等。
哪一个更好？Spoke.ai 还是 Typeset？
当我们比较Spoke.ai和Typeset时，这两个都是AI驱动的summarizer工具， Typeset是赞成票的明显赢家。 Typeset有 24 个赞成票，而 Spoke.ai 有 6 个赞成票。
感觉叛逆？投票并搅动事情！
Spoke.ai
什么是 Spoke.ai?
Spoke.ai允许您直接在Slack中通过AI-Summarization创建即时上下文。
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在松弛线程中的所有消息中概括，以为您提供所需的上下文。
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共享线程摘要，以帮助您的队友节省时间并专注于关键结果。
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存储汇总的线程，以便您以后可以将其引用回到结果，以查看结果及其制造商。
Typeset
什么是 Typeset?
您的平台探索和解释论文。搜索270m+的论文，以简单的语言了解它们，然后查找连接的论文，作者，主题。
Spoke.ai 赞同数
6
Typeset 赞同数
24🏆
Spoke.ai 类别
- Summarizer
Typeset 类别
- Summarizer
Spoke.ai 定价类型
- Freemium
Typeset 定价类型
- Free
Spoke.ai 使用的技术
Slack
Webflow
Typeset 使用的技术
Amazon Web Services
jQuery
Bootstrap
Spoke.ai 标签
Content Summary
Typeset 标签
Content Summary
AI Whitepapers
AI Emails
Spoke.ai 平均评分
无可用评分Typeset 平均评分
4.00
Spoke.ai 评论
无可用评论Typeset 评论
Sara Sara
The simulation model validated experimental J-V and external quantum efficiency (EQE) to demonstrate an improvement in perovskite (PSK) solar cell (PSC) efficiency. The effect of interface properties at the electron transport layer (ETL)/PSK and PSK/hole transport layer (HTL) was investigated using the Solar Cell Capacitance Simulator (SCAPS). The interfaces between ETL, PSK, and HTL were identified as critical factors in determining high open-circuit voltage (Voc) and FF. In this study, the impact of two types of interfaces, ETL/PSK and PSK/HTL, were investigated. Lowering the defect density at both interfaces to 102 cm−2 reduced interface recombination and increased Voc and FF.The absorber layer defect density and n/i interface of perovskite solar cells were investigated using the Solar Cell Capacitance Simulator-1D (SCAPS-1D) at various cell thicknesses. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was calculated. With a defect density of <1014 cm−3 and an absorber layer thickness of >400 nm, power conversion efficiency can exceed 25%. The study assumed a 0.6 eV Gaussian defect energy level beneath the perovskite's conduction band, which has a characteristic energy of 0.1 eV. These conditions produced the same result on the n/i interface. These findings place constraints on numerical simulations of the correlation between defect mechanism and performance